Nitrogen incorporation into high-k gate dielectrics

Ein Fachbuch, das die Rolle von Stickstoff in HfO₂‑ und HfSiO‑Gate‑Dielektriken beleuchtet, zeigt, wie dessen Einbindung die Stabilität, die ...
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Nitrogen incorporation into high-k gate dielectrics, Fachbücher
Galaxus.de
68.00 EUR
Preis aktualisiert am: 18-10-2026 08:31:17
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ISBN
3639157052

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