Device characterization of Dy-incorporated HfO2 gate oxide nMOS device: Device characteristics and reliability of DyO/HfO gate dielectrics and the application to NAND Flash memory

Wo zu kaufen (1) Eigenschaften
Gesponsert
Device characterization of Dy-incorporated HfO2 gate oxide nMOS device, Fachbücher
Galaxus.de
59.00 EUR
Preis aktualisiert am: 14-06-2026 05:57:40
Siehe Produktangebot

Allgemein

Marke
LAP Lambert Academic Publishing

Eigenschaften

Ähnliche Produkte

Electrical Characterization of Metal-DNA-Metal Device: DNA in Electronics Device
Electrical Characterization of Metal-DNA-Metal Device: DNA in Electronics Device
Produkt anzeigen
LabVIEW Run Four Point Probe Device: Electrical Characterization of Semiconducting Thin Films made easy by Four Point Probe System controlled by LabVIEW
LabVIEW Run Four Point Probe Device: Electrical Characterization of Semiconducting Thin Films made easy by Four Point Probe System controlled by LabVIEW
Produkt anzeigen
Short Pulse Generation with Semiconductor Lasers
Short Pulse Generation with Semiconductor Lasers
Produkt anzeigen
Characterization and Modeling of Phase-Change Memories
Characterization and Modeling of Phase-Change Memories
Produkt anzeigen
Surface Modification for Organic Electronic Devices
Surface Modification for Organic Electronic Devices
Produkt anzeigen
Fabrication and characterization of MgB2 thin films and devices: Fabrication and characterization of Magnesium Diboride thin films by co-evaporartion and of an MgB2 SQUID magnetometer
Fabrication and characterization of MgB2 thin films and devices: Fabrication and characterization of Magnesium Diboride thin films by co-evaporartion and of an MgB2 SQUID magnetometer
Produkt anzeigen
Menü