Maurya, Savita: Study of Atomic Layer Deposited HfO2/Si Interfaces

Wo zu kaufen (2) Eigenschaften
Gesponsert
Study of Atomic Layer Deposited HfO2/Si Interfaces, Fachbücher von Savita Maurya
Galaxus.de
61.90 EUR
Preis aktualisiert am: 29-10-2026 14:44:44
Siehe Produktangebot
Gesponsert
Study of Atomic Layer Deposited HfO2/Si Interfaces
Hugendubel
61.99 EUR
Preis aktualisiert am: 29-10-2026 14:11:02
Siehe Produktangebot

Allgemein

Marke
LAP Lambert Academic Publishing

Eigenschaften

Ähnliche Produkte

Device characterization of Dy-incorporated HfO2 gate oxide nMOS device: Device characteristics and reliability of DyO/HfO gate dielectrics and the application to NAND Flash memory
Device characterization of Dy-incorporated HfO2 gate oxide nMOS device: Device characteristics and reliability of DyO/HfO gate dielectrics and the application to NAND Flash memory
Aus58.34 EUR 3
Produkt anzeigen
Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes (Research at NaMLab)
Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes (Research at NaMLab)
Aus49.99 EUR 2
Produkt anzeigen
Tijjani, Abdulrazak: Characteristics of Carbon-Nanotube FET and Silicon Nanowire FET
Tijjani, Abdulrazak: Characteristics of Carbon-Nanotube FET and Silicon Nanowire FET
Aus79.99 EUR 1
Produkt anzeigen
Nitrogen incorporation into high-k gate dielectrics
Nitrogen incorporation into high-k gate dielectrics
Aus68.00 EUR 1
Produkt anzeigen
High-k materials in Dynamic Random Access Memories (DRAM): Atomic scale engineering of HfO2-based dielectrics for future DRAM applications
High-k materials in Dynamic Random Access Memories (DRAM): Atomic scale engineering of HfO2-based dielectrics for future DRAM applications
Aus53.90 EUR 1
Produkt anzeigen
Menü